Fortuitously, the silicon of today’s semiconductor technology is an excellent photodetector, which covers the wide spectral range from X-rays to the near infrared, efficiently detecting photons with a wavelength between 0.05 nm and 1100 nm. However, an increasing number of applications in quality inspection, safety, security, material analysis, biosensing, medical diagnostics, etc. requires the extension of this wavelength range to infrared radiation from 1 µm to several tens of µm, or to the harder X-ray region with photon energies from 10 keV to several 100 keV. This conference is devoted to the many new materials and devices that make this wavelength extension possible. Many of these materials are used in conjunction with silicon-based charge or voltage detectors. Yet a large number of these materials are semiconductors in their own right, and complete image sensors can be fabricated monolithically out of them. They all have in common that once reliable and cost-effective fabrication has been achieved, many new and valuable applications touching our everyday lives will become possible.
Topics include, but are not limited to:
Optimization of proven IR-materials, such as HgCdTe, InGaAs, InSb, IrSi, …
IR Focal Plane Arrays (FPA) with lead salt materials
Stefan Lauxtermann, Teledyne Imaging Sensors, Camarillo (US)
Andrea Simoni, ITC-irst, Trento (IT)
Invited Speaker
Meimei Tidrow, Night Vision and Electronic Sensors Directorate - NVESD, Fort Belvoir (US)
Abstract Submission and Deadlines
Submission will open in December 2008
Deadline for submission of abstracts: 26 January 2009
Notification to authors: 19 February 2009
Publication of the programme: April 2009
Prospective authors are requested to submit an abstract covering a minimum of half a page and a maximum of two pages. All accepted abstracts will be published in the EOS Conference digest that will be available on-site at the beginning of the conference. Abstracts shall be submitted online at www.myeos.org/MUNICH2009 with the responsible author’s contact data. The EOS guidelines for abstracts can be downloaded at www.myeos.org/abstractguidelines. Submission will open at a later date.
JEOS:RP - Special Publication Offer
The authors of accepted abstracts receive a 20% discount on the publication rate for JEOS:RP, the e-journal of the European Optical Society (www.jeos.org). The paper submitted to JEOS:RP must be an original contribution that is connected to the conference presentation and must be submitted no later than 15 August, 2009. The publication rate for authors of the event is 280€ (instead of 350€).
Registration
The registration for this EOS conference includes admission to all conferences of the WORLD OF PHOTONICS CONGRESS 2009 as well as to the LASER World of PHOTONICS 2009 exhibition. Please register via the EOS online shop at www.myeos.org/shop. Registration will open in 2009. Deadline for early-bird registration: 4 May 2009.